Opto Diode, a member of the ITW Photonics Group, has introduced the OD-669-850 high-power gallium aluminium arsenide (GaAlAs) infrared light-emitting diode (IRLED) illuminator. Ideal for night vision illumination tasks, the infrared illuminator features ultra-high optical output, from 800 (minimum) to 1250mW (typical) and a peak emission wavelength of 850nm.
The new device provides an exceptionally uniform optical beam. The spectral bandwidth at 50 per cent is typically 40nm, and the half-intensity beam angle is 120 degrees. All surfaces on the standard 2-lead, TO-66 electrically-isolated package are gold plate.
The OD-669-850 IRLED illuminator’s operating and storage temperatures range from -40°C to +100°C with a maximum junction temperature of 100°C. Power dissipation (under absolute maximum ratings at 25°C) is 6W, with a continuous forward current of 370mA, a peak forward current of 1A and reverse voltage at 5V.