Opto Diode has released the SXUV100, a single active area 100mm2 photodiode. The device can detect to 1nm, and provides a stable response after exposure to EUV/UV conditions. Applications include detection of 13.5nm wavelengths or any high power density source monitoring between 1nm-150nm.
The new photodiode is operational from 1nm to 1,000nm, with peak photon responsivity at 0.27A/W at 1nm and 0.33 A/W at 850nm. Shunt resistance at ±10mV is 10MOhms, the capacitance is typically 6 nanofarads, and the response time is typically 250 nanoseconds.
The SXUV100’s operating and storage temperatures range from -10°C to 40°C and from -20°C to 80°C in nitrogen or vacuum conditions. The maximum junction temperature is 70°C and the lead-soldering temperature is 260°C at 0.080 inches from the case for 10 seconds.