Mitsubishi Electric has released a switchable power amplifier for WCDMA handsets that increases the talk time while reducing the number of components on the BOM by omitting the DC/DC converter needed by conventional WCDMA power amplifiers so far.
The InGaP HBT (Hetero-junction Bipolar Transistor) module BA01254 is integrated into a package measuring just 4 x 4 x 1.2mm, and provides a maximum output power rate of 27.0dBm (at a gain of 26.5dB) with an efficiency of 40 per cent, 24 per cent and 7 per cent, at typical output power rates of 27dBm, 16dBm and 8dBm, respectively.
The module is suited for the frequency range from 1920 to 1980MHz and operates from supply voltages of 3.4V while drawing quiescent currents typically only 12mA. While the Rx band noise power is specified with typically -139 dBm/Hz the ACLR5 (adjacent channel leakage power ratio) is as low as -41dBc or -52dBc.